High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift.

نویسندگان

  • Faruk Dirisaglik
  • Gokhan Bakan
  • Zoila Jurado
  • Sadid Muneer
  • Mustafa Akbulut
  • Jonathan Rarey
  • Lindsay Sullivan
  • Maren Wennberg
  • Adrienne King
  • Lingyi Zhang
  • Rebecca Nowak
  • Chung Lam
  • Helena Silva
  • Ali Gokirmak
چکیده

During the fast switching in Ge2Sb2Te5 phase change memory devices, both the amorphous and fcc crystalline phases remain metastable beyond the fcc and hexagonal transition temperatures respectively. In this work, the metastable electrical properties together with crystallization times and resistance drift behaviour of GST are studied using a high-speed, device-level characterization technique in the temperature range of 300 K to 675 K.

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عنوان ژورنال:
  • Nanoscale

دوره 7 40  شماره 

صفحات  -

تاریخ انتشار 2015